| Автор | A McKinley |
| Автор | A W Parke |
| Автор | G J Hughes |
| Автор | J Fryar |
| Автор | R H Williams |
| Дата выпуска | 1980-10-14 |
| dc.description | The authors have investigated successfully the production of atomically clean surfaces of crystalline InP, crystalline Si and amorphous Si using light from a pulsed laser. Angle-resolved photoelectron spectra for surfaces of crystalline Si cleaned in this way are presented and compared with those for surfaces cleaned in other ways. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Atomically clean semiconductor surfaces prepared by laser irradiation |
| Тип | lett |
| DOI | 10.1088/0022-3727/13/10/005 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 13 |
| Первая страница | L193 |
| Последняя страница | L197 |
| Аффилиация | A McKinley; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK |
| Аффилиация | A W Parke; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK |
| Аффилиация | G J Hughes; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK |
| Аффилиация | J Fryar; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK |
| Аффилиация | R H Williams; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK |
| Выпуск | 10 |
