X-ray diffraction characterization of Sb delta doping in Si
A R Powell; R A A Kubiak; T E Whall; D K Bowen; A R Powell; Warwick Univ., Coventry, UK; R A A Kubiak; Warwick Univ., Coventry, UK; T E Whall; Warwick Univ., Coventry, UK; D K Bowen; Warwick Univ., Coventry, UK
Журнал:
Journal of Physics D: Applied Physics
Дата:
1990-12-14
Аннотация:
This communication demonstrates the use of high precision X-ray diffraction together with dynamical X-ray simulation theory in the non-destructive characterization of an Sb delta doped layer in (100) Si. The width of the delta layer is determined to be <2 nm. Information is also obtained on the strain fields induced by the Sb delta layer, indicating a total lattice expansion in the (100) direction of 0.046 nm.
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