| Автор | A R Powell |
| Автор | R A A Kubiak |
| Автор | T E Whall |
| Автор | D K Bowen |
| Дата выпуска | 1990-12-14 |
| dc.description | This communication demonstrates the use of high precision X-ray diffraction together with dynamical X-ray simulation theory in the non-destructive characterization of an Sb delta doped layer in (100) Si. The width of the delta layer is determined to be <2 nm. Information is also obtained on the strain fields induced by the Sb delta layer, indicating a total lattice expansion in the (100) direction of 0.046 nm. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | X-ray diffraction characterization of Sb delta doping in Si |
| Тип | lett |
| DOI | 10.1088/0022-3727/23/12/040 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 23 |
| Первая страница | 1745 |
| Последняя страница | 1747 |
| Аффилиация | A R Powell; Warwick Univ., Coventry, UK |
| Аффилиация | R A A Kubiak; Warwick Univ., Coventry, UK |
| Аффилиация | T E Whall; Warwick Univ., Coventry, UK |
| Аффилиация | D K Bowen; Warwick Univ., Coventry, UK |
| Выпуск | 12 |
