Impulse-degradation analysis of ZnO-based varistors by AC impedance measurements
Ai Bui; K al Abdullah; A Loubiere; M Tao; Q C Nguyen; Ai Bui; Lab. de Genie Electrique de Toulouse, Univ. Paul Sabatier, France; K al Abdullah; Lab. de Genie Electrique de Toulouse, Univ. Paul Sabatier, France; A Loubiere; Lab. de Genie Electrique de Toulouse, Univ. Paul Sabatier, France; M Tao; Lab. de Genie Electrique de Toulouse, Univ. Paul Sabatier, France; Q C Nguyen; Lab. de Genie Electrique de Toulouse, Univ. Paul Sabatier, France
Журнал:
Journal of Physics D: Applied Physics
Дата:
1991-05-14
Аннотация:
A new degradation analysis of ZnO-based varistors by AC impedance measurements is presented. From these measurements, which have been achieved on samples as a response to a small signal in the frequency range 10<sup>-3</sup> to 10<sup>5</sup> Hz, at room temperature, the distribution function of the relaxation time constant has been deduced. The heterogeneity factor beta characterizing the barriers constituting the ZnO-based varistors has been used as a measure of degradation. Our data reveal that the grain boundaries are not identical, in good agreement with the numerical/experimental current(I)-voltage(V) characteristics of various single-grain junctions.
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