| Автор | Seung Hee Nam |
| Автор | Neung Ho Cho |
| Автор | Ho Gi Kim |
| Дата выпуска | 1992-04-14 |
| dc.description | Polycrystalline SrTiO<sub>3</sub> thin films have been prepared on Si(100) substrates by RF magnetron sputtering. The films were deposited at 400 degrees C and were annealed at 600 degrees C. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. From the result of the capacitance-voltage (C-V) characteristics the dielectric constant and the flat band voltage of the annealed films were measured to be 75 and -0.31 V, respectively. These oxide thin films with high dielectric constant are potentially useful in ULSI applications. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Characterization of SrTiO<sub>3</sub> thin films prepared by RF magnetron sputtering |
| Тип | paper |
| DOI | 10.1088/0022-3727/25/4/020 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 25 |
| Первая страница | 727 |
| Последняя страница | 729 |
| Аффилиация | Seung Hee Nam; Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea |
| Аффилиация | Neung Ho Cho; Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea |
| Аффилиация | Ho Gi Kim; Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea |
| Выпуск | 4 |
