Material transport in high-pressure diode sputtering
E K Hollmann; A G Zaitsev; E K Hollmann; Dept. of Electron & Ion Vacuum Technol., Electr. Eng. Inst., St. Petersburg, Russia; A G Zaitsev; Dept. of Electron & Ion Vacuum Technol., Electr. Eng. Inst., St. Petersburg, Russia
Журнал:
Journal of Physics D: Applied Physics
Дата:
1993-04-14
Аннотация:
The effect of gas pressure and re-emission of sputtered species from the electrodes on the deposition rate of these species is considered theoretically. lt is shown that increase of gas pressure makes the deposition rate comparatively insensitive to re-emission of sputtered material from both electrodes. This provides the principal advantage for multi-component thin-film preparation.
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