Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser
S Dixon; C Edwards; S B Palmer; D W Schindel
Журнал:
Journal of Physics D: Applied Physics
Дата:
1996-05-14
Аннотация:
The performance of a Q-switched Nd:YAG laser as an ultrasonic source in a single-crystal silicon sample has been studied using a wide-bandwidth modified Michelson interferometer as an absolute displacement sensor. At low power densities the source is an extended buried thermoelastic source; however, the thermal expansion is less than the contraction due to the negative pressure coefficient of the energy gap and the illuminated region contracts rather than expands. Above a certain power density, ablation occurs, giving rise to a localized normal force at the surface of the sample.
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