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Автор S Dixon
Автор C Edwards
Автор S B Palmer
Автор D W Schindel
Дата выпуска 1996-05-14
dc.description The performance of a Q-switched Nd:YAG laser as an ultrasonic source in a single-crystal silicon sample has been studied using a wide-bandwidth modified Michelson interferometer as an absolute displacement sensor. At low power densities the source is an extended buried thermoelastic source; however, the thermal expansion is less than the contraction due to the negative pressure coefficient of the energy gap and the illuminated region contracts rather than expands. Above a certain power density, ablation occurs, giving rise to a localized normal force at the surface of the sample.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser
Тип paper
DOI 10.1088/0022-3727/29/5/033
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 29
Первая страница 1345
Последняя страница 1348
Выпуск 5

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