Correlation between fluctuating conductivity of the channel, transconductance dispersion and noise of a MESFET
Han-Chang Tsai; Cheng-Kuang Liu; Han-Chang Tsai; Department of Electronic Engineering, National Taiwan Institute of Technology, 43 Keelung Road, Section 4, Taipei, Taiwan 10772; Cheng-Kuang Liu; Department of Electronic Engineering, National Taiwan Institute of Technology, 43 Keelung Road, Section 4, Taipei, Taiwan 10772
Журнал:
Journal of Physics D: Applied Physics
Дата:
1997-09-21
Аннотация:
Theoretical models of the noise spectra of MESFETs have been researched based on experimental data with the aim of obtaining a correlation with the fluctuating conductivity and transconductance dispersion in terms of frequency, bias, temperature and surface state. The results obtained correspond well with the experimental data. Moreover, we show the influence of the transconductance dispersion on the surface state and some sources of 1/f noise.
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