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Автор Han-Chang Tsai
Автор Cheng-Kuang Liu
Дата выпуска 1997-09-21
dc.description Theoretical models of the noise spectra of MESFETs have been researched based on experimental data with the aim of obtaining a correlation with the fluctuating conductivity and transconductance dispersion in terms of frequency, bias, temperature and surface state. The results obtained correspond well with the experimental data. Moreover, we show the influence of the transconductance dispersion on the surface state and some sources of 1/f noise.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Correlation between fluctuating conductivity of the channel, transconductance dispersion and noise of a MESFET
Тип paper
DOI 10.1088/0022-3727/30/18/020
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 30
Первая страница 2643
Последняя страница 2650
Аффилиация Han-Chang Tsai; Department of Electronic Engineering, National Taiwan Institute of Technology, 43 Keelung Road, Section 4, Taipei, Taiwan 10772
Аффилиация Cheng-Kuang Liu; Department of Electronic Engineering, National Taiwan Institute of Technology, 43 Keelung Road, Section 4, Taipei, Taiwan 10772
Выпуск 18

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