Alternating current characterization of sputter deposited Ti oxide films
J Rodríguez; M Gómez; G A Niklasson; C G Granqvist; J Rodríguez; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden; M Gómez; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden; G A Niklasson; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden; C G Granqvist; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden
Журнал:
Journal of Physics D: Applied Physics
Дата:
2000-01-07
Аннотация:
Ti oxide films with varying stoichiometries and different crystal structures were prepared by reactive direct current magnetron sputtering in oxygen-depleted plasmas. The complex dielectric permittivity was determined in the 10<sup>-3</sup> -10<sup>7</sup> Hz range from measurements using a capacitor configuration. The real and imaginary parts of displayed power-law dependences from ~10 Hz up to a value between 1 and 10 kHz. Our data could be rationalized in terms of a model for screened hopping of vacancy-induced charge carriers, but the details remain poorly understood.
102.1Кб