| Автор | J Rodríguez |
| Автор | M Gómez |
| Автор | G A Niklasson |
| Автор | C G Granqvist |
| Дата выпуска | 2000-01-07 |
| dc.description | Ti oxide films with varying stoichiometries and different crystal structures were prepared by reactive direct current magnetron sputtering in oxygen-depleted plasmas. The complex dielectric permittivity was determined in the 10<sup>-3</sup> -10<sup>7</sup> Hz range from measurements using a capacitor configuration. The real and imaginary parts of displayed power-law dependences from ~10 Hz up to a value between 1 and 10 kHz. Our data could be rationalized in terms of a model for screened hopping of vacancy-induced charge carriers, but the details remain poorly understood. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Alternating current characterization of sputter deposited Ti oxide films |
| Тип | paper |
| DOI | 10.1088/0022-3727/33/1/304 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 33 |
| Первая страница | 24 |
| Последняя страница | 27 |
| Аффилиация | J Rodríguez; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden |
| Аффилиация | M Gómez; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden |
| Аффилиация | G A Niklasson; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden |
| Аффилиация | C G Granqvist; Department of Materials Science, The Ångström Laboratory, Uppsala University, PO Box 534, SE-751 21 Uppsala, Sweden |
| Выпуск | 1 |
