Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy
A Krier; V V Sherstnev; A Krier; Z Labadi; S E Krier; H H Gao; A Krier; Physics Department, Lancaster University, Lancaster LA1 4YB, UK; V V Sherstnev; Physics Department, Lancaster University, Lancaster LA1 4YB, UK; A Krier; Physics Department, Lancaster University, Lancaster LA1 4YB, UK; Z Labadi; Physics Department, Lancaster University, Lancaster LA1 4YB, UK; S E Krier; Physics Department, Lancaster University, Lancaster LA1 4YB, UK; H H Gao; Physics Department, Lancaster University, Lancaster LA1 4YB, UK
Журнал:
Journal of Physics D: Applied Physics
Дата:
2000-12-21
Аннотация:
Electroluminescence has been observed at 3.3 µm from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 µm at 250 K.
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