| Автор | A Krier |
| Автор | V V Sherstnev |
| Автор | A Krier |
| Автор | Z Labadi |
| Автор | S E Krier |
| Автор | H H Gao |
| Дата выпуска | 2000-12-21 |
| dc.description | Electroluminescence has been observed at 3.3 µm from InAs quantum well LEDs grown from the liquid phase for the first time. A special rapid slider liquid phase epitaxial growth technique was used to produce the wells within the active region of an InAsSbP homojunction p-i-n LED. The light emission was attributed to type II recombination between confined electron and hole states at the InAsSbP/ InAs interfaces of the InAs quantum well. Intense electroluminescence emission was observed at low temperatures from a multi-interface LED which contained three InAs quantum wells in the i-region of the LED structure with emission peaking at 3.68 µm at 250 K. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy |
| Тип | paper |
| DOI | 10.1088/0022-3727/33/24/305 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 33 |
| Первая страница | 3156 |
| Последняя страница | 3160 |
| Аффилиация | A Krier; Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
| Аффилиация | V V Sherstnev; Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
| Аффилиация | A Krier; Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
| Аффилиация | Z Labadi; Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
| Аффилиация | S E Krier; Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
| Аффилиация | H H Gao; Physics Department, Lancaster University, Lancaster LA1 4YB, UK |
| Выпуск | 24 |
