Young's modulus determinations on α-SiC were performed at room temperature and from 700 to 1400°C. The data were obtained from stress-strain measurements on whiskers.At 700°C the moduli parallel and perpendicular to the hexagonal axis are respectively 9 and 14% greater than at room temperature; for higher temperatures they show a fluctuating increase amounting at 1300°C to 14 and 34% respectively of their room-temperature value. This increase in modulus accounting for the high-temperature strength of silicon carbide is tentatively correlated with its thermal expansion and specific heat properties.