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Автор J D B Veldkamp
Автор W F Knippenberg
Дата выпуска 1974-02-11
dc.description Young's modulus determinations on α-SiC were performed at room temperature and from 700 to 1400°C. The data were obtained from stress-strain measurements on whiskers.At 700°C the moduli parallel and perpendicular to the hexagonal axis are respectively 9 and 14% greater than at room temperature; for higher temperatures they show a fluctuating increase amounting at 1300°C to 14 and 34% respectively of their room-temperature value. This increase in modulus accounting for the high-temperature strength of silicon carbide is tentatively correlated with its thermal expansion and specific heat properties.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Anomalous Young's modulus behaviour of SiC at elevated temperatures
Тип paper
DOI 10.1088/0022-3727/7/3/306
Electronic ISSN 1361-6463
Print ISSN 0022-3727
Журнал Journal of Physics D: Applied Physics
Том 7
Первая страница 407
Последняя страница 411
Аффилиация J D B Veldkamp; Philips Research Laboratories, Eindhoven, Netherlands
Аффилиация W F Knippenberg; Philips Research Laboratories, Eindhoven, Netherlands
Выпуск 3

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