Автор |
J D B Veldkamp |
Автор |
W F Knippenberg |
Дата выпуска |
1974-02-11 |
dc.description |
Young's modulus determinations on α-SiC were performed at room temperature and from 700 to 1400°C. The data were obtained from stress-strain measurements on whiskers.At 700°C the moduli parallel and perpendicular to the hexagonal axis are respectively 9 and 14% greater than at room temperature; for higher temperatures they show a fluctuating increase amounting at 1300°C to 14 and 34% respectively of their room-temperature value. This increase in modulus accounting for the high-temperature strength of silicon carbide is tentatively correlated with its thermal expansion and specific heat properties. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Anomalous Young's modulus behaviour of SiC at elevated temperatures |
Тип |
paper |
DOI |
10.1088/0022-3727/7/3/306 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
7 |
Первая страница |
407 |
Последняя страница |
411 |
Аффилиация |
J D B Veldkamp; Philips Research Laboratories, Eindhoven, Netherlands |
Аффилиация |
W F Knippenberg; Philips Research Laboratories, Eindhoven, Netherlands |
Выпуск |
3 |