| Автор | P R Jay |
| Автор | H C Wright |
| Дата выпуска | 1981-04-01 |
| dc.description | A photocapacity technique for observing defect centres in semiconducting material is described. It is advantageous in not requiring the formation of a permanent diode junction in the semiconductor. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Photocapacity analysis using a mercury probe |
| Тип | paper |
| DOI | 10.1088/0022-3735/14/4/002 |
| Print ISSN | 0022-3735 |
| Журнал | Journal of Physics E: Scientific Instruments |
| Том | 14 |
| Первая страница | 408 |
| Последняя страница | 409 |
| Аффилиация | P R Jay; Plessey Res. (Caswell) Ltd., Towcester, UK |
| Аффилиация | H C Wright; Plessey Res. (Caswell) Ltd., Towcester, UK |
| Выпуск | 4 |
