4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs<sub>1-x</sub>Sb<sub>x</sub> strained layer superlattices
P Tang; M J Pullin; S J Chung; C C Phillips; R A Stradling; A G Norman; Y B Li; L Hart; P Tang; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; M J Pullin; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; S J Chung; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; C C Phillips; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; R A Stradling; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; A G Norman; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; Y B Li; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK; L Hart; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK
Журнал:
Semiconductor Science and Technology
Дата:
1995-08-01
Аннотация:
Arsenic-rich InAs/lnAs<sub>1-x</sub>Sb<sub>x</sub> strained layer superlattices (SLSs) grown on GaAs substrates by molecular beam epitaxy (MBE) are studied for their potential application as infrared emitters. The long-wavelength emission (4-11 mu m) is highly sensitive to superlattice design parameters and is accounted for by a large type-II band offset, greater than in previously studied antimony-rich InSb/lnAs<sub>1-x</sub>Sb<sub>x</sub> SLSs. High internal PL efficiencies (>10%) and intense luminescence emission were observed at these long wavelengths despite large dislocation densities. Initial unoptimized InAs/lnAs<sub>1-x</sub>Sb<sub>x</sub> SLS light emitting diodes gave approximately=200 nW of lambda =5 mu m emission at 300 K.
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