| Автор | P Tang |
| Автор | M J Pullin |
| Автор | S J Chung |
| Автор | C C Phillips |
| Автор | R A Stradling |
| Автор | A G Norman |
| Автор | Y B Li |
| Автор | L Hart |
| Дата выпуска | 1995-08-01 |
| dc.description | Arsenic-rich InAs/lnAs<sub>1-x</sub>Sb<sub>x</sub> strained layer superlattices (SLSs) grown on GaAs substrates by molecular beam epitaxy (MBE) are studied for their potential application as infrared emitters. The long-wavelength emission (4-11 mu m) is highly sensitive to superlattice design parameters and is accounted for by a large type-II band offset, greater than in previously studied antimony-rich InSb/lnAs<sub>1-x</sub>Sb<sub>x</sub> SLSs. High internal PL efficiencies (>10%) and intense luminescence emission were observed at these long wavelengths despite large dislocation densities. Initial unoptimized InAs/lnAs<sub>1-x</sub>Sb<sub>x</sub> SLS light emitting diodes gave approximately=200 nW of lambda =5 mu m emission at 300 K. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs<sub>1-x</sub>Sb<sub>x</sub> strained layer superlattices |
| Тип | paper |
| DOI | 10.1088/0268-1242/10/8/023 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 10 |
| Первая страница | 1177 |
| Последняя страница | 1180 |
| Аффилиация | P Tang; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | M J Pullin; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | S J Chung; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | C C Phillips; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | R A Stradling; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | A G Norman; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | Y B Li; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Аффилиация | L Hart; Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK |
| Выпуск | 8 |
