Accumulation and exclusion of excess carriers observed in inhomogeneous germanium samples
G I Teslenko; T Piotrowski; J Pultorak
Журнал:
Semiconductor Science and Technology
Дата:
1996-01-01
Аннотация:
IR probing measurements of germanium samples are presented, showing, according to the theory [1], accumulation and exclusion effects due to current flow through an internal built-in electric field appearing in the inhomogeneous part of the crystal.
54.50Кб