| Автор | G I Teslenko |
| Автор | T Piotrowski |
| Автор | J Pultorak |
| Дата выпуска | 1996-01-01 |
| dc.description | IR probing measurements of germanium samples are presented, showing, according to the theory [1], accumulation and exclusion effects due to current flow through an internal built-in electric field appearing in the inhomogeneous part of the crystal. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Accumulation and exclusion of excess carriers observed in inhomogeneous germanium samples |
| Тип | lett |
| DOI | 10.1088/0268-1242/11/1/003 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 11 |
| Первая страница | L133 |
| Последняя страница | L134 |
| Выпуск | 1 |
