Experimental evidence for DX energy distributions in delta-doped A1<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum well structures
J M Roberts; J J Harris; C Roberts
Журнал:
Semiconductor Science and Technology
Дата:
1996-03-01
Аннотация:
We interpret the free-carrier loss observed in a series of highly Si delta-doped A1<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum well structures in terms of a model of DX centre formation which includes Coulomb interactions. Our interpretation implies a strongly growth-dependent DX centre energy. The data allow investigation of the DX centre distribution between 214 and 249 meV, and confirm a considerably broadened DX centre density of states ( meV).
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