| Автор | J M Roberts |
| Автор | J J Harris |
| Автор | C Roberts |
| Дата выпуска | 1996-03-01 |
| dc.description | We interpret the free-carrier loss observed in a series of highly Si delta-doped A1<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum well structures in terms of a model of DX centre formation which includes Coulomb interactions. Our interpretation implies a strongly growth-dependent DX centre energy. The data allow investigation of the DX centre distribution between 214 and 249 meV, and confirm a considerably broadened DX centre density of states ( meV). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Experimental evidence for DX energy distributions in delta-doped A1<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum well structures |
| Тип | lett |
| DOI | 10.1088/0268-1242/11/3/002 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 11 |
| Первая страница | L458 |
| Последняя страница | L460 |
| Выпуск | 3 |
