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Автор Robert E Wagner
Автор Andreas Mandelis
Дата выпуска 1996-03-01
dc.description The effect of nonlinear carrier recombination on the photothermal modulated optical reflectance (PMOR) signal of a crystalline semiconductor has been theoretically modelled. The PMOR signal consists of both thermal and Drude (free-carrier) components, and nonlinear recombination influences it through its direct effect on the modulated carrier density, and its indirect effect on the modulated sample temperature. Quadratic recombination was shown to lead to a sublinear intensity dependence of the photocurrent amplitude at elevated optical excitation intensities; cubic recombination leads to a supralinear intensity dependence of the PMOR amplitude accompanied by a progressive phase lag dependence on pump laser-beam intensity. The effect of nonlinear carrier and heat-flux gradients was also considered and found to be negligible with PMOR detection.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Nonlinear photothermal modulated optical reflectance and photocurrent phenomena in crystalline semiconductors: I. Theoretical
Тип paper
DOI 10.1088/0268-1242/11/3/005
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 11
Первая страница 289
Последняя страница 299
Аффилиация Robert E Wagner; Photothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Ontario M5S 1A4, Canada
Аффилиация Andreas Mandelis; Photothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Ontario M5S 1A4, Canada
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