| Автор | K G McGuigan |
| Автор | M O Henry |
| Автор | J D Campion |
| Автор | S E Daly |
| Автор | E McGlynn |
| Автор | M C Do Carmo |
| Дата выпуска | 1996-06-01 |
| dc.description | We report two new photoluminescence systems found in Czocralski silicon doped with zinc and annealed in the temperature range C. The zero-phonon transitions of these systems are observed at 1050.31(5) meV, 1051.24(5) meV and 1100.42(5) meV. Uniaxial stress perturbations applied to these transitions reveal that both centres possess monoclinic I symmetry with almost identical stress fit parameters. These parameters are remarkably similar to those recently reported for group II acceptor and oxygen-related complexes in silicon. Defect geometries and possible perturbation mechanisms are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich, zinc-doped silicon |
| Тип | paper |
| DOI | 10.1088/0268-1242/11/6/014 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 11 |
| Первая страница | 930 |
| Последняя страница | 934 |
| Выпуск | 6 |
