Analysis of quantum lifetime behaviour in modulation-doped n-channel structures
D-H Shin; C E Becker; J J Harris; J M Fernández; N J Woods; T J Thornton; D K Maude; J-C Portal
Журнал:
Semiconductor Science and Technology
Дата:
1998-10-01
Аннотация:
Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above . The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above , and this is attributed to increased small-angle scattering due to acoustic phonons.
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