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Автор D-H Shin
Автор C E Becker
Автор J J Harris
Автор J M Fernández
Автор N J Woods
Автор T J Thornton
Автор D K Maude
Автор J-C Portal
Дата выпуска 1998-10-01
dc.description Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above . The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above , and this is attributed to increased small-angle scattering due to acoustic phonons.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Analysis of quantum lifetime behaviour in modulation-doped n-channel structures
Тип paper
DOI 10.1088/0268-1242/13/10/009
Electronic ISSN 1361-6641
Print ISSN 0268-1242
Журнал Semiconductor Science and Technology
Том 13
Первая страница 1106
Последняя страница 1110
Выпуск 10

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