| Автор | H Schuler |
| Автор | N Y Jin-Phillipp |
| Автор | F Phillipp |
| Автор | K Eberl |
| Дата выпуска | 1998-11-01 |
| dc.description | We report an in situ etching treatment of self-assembled InAs islands using in a molecular beam epitaxy system which allows reshaping and downsizing of the quantum dots with atomic layer precision. etching of a thin GaAs layer covering the InAs islands results in an array of 10 - 15 nm size holes on the surface due to enhanced etching at locally strained areas. The dots of a second InAs layer nucleate preferentially within the etched dips, which are vertically aligned with the underlying InAs dots. The photoluminescence linewidth is improved as compared to non-etched samples with equal spacer thickness. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Size modification of self-assembled InAs quantum dots by in situ etching |
| Тип | lett |
| DOI | 10.1088/0268-1242/13/11/001 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 13 |
| Первая страница | 1341 |
| Последняя страница | 1345 |
| Выпуск | 11 |
