| Автор | N V Dyakonova |
| Автор | M E Levinshtein |
| Автор | J W Palmour |
| Автор | S L Rumyantsev |
| Автор | R Singh |
| Дата выпуска | 1998-02-01 |
| dc.description | The turn-on process and steady state current-voltage characteristics have been investigated in 4H-SiC thyristors with a forward breakover voltage close to 700 V and pulse switch current density of . The current rise constant decreases monotonically with increasing temperature: ns at and ns at T = 500 K at high bias V. The value of ns is the lowest observed value for SiC thyristors. At very high current density the residual voltage drop on 4H-SiC thyristors is lower than on identically rated Si thyristors. The voltage drop decreases monotonically with increasing temperature. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Turn-on process in high voltage 4H-SiC thyristors |
| Тип | paper |
| DOI | 10.1088/0268-1242/13/2/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 13 |
| Первая страница | 241 |
| Последняя страница | 243 |
| Выпуск | 2 |
