Influences of the mesa-sidewall effect on Ga<sub>0.51</sub>In<sub>0.49</sub>P/In<sub>0.15</sub>Ga<sub>0.85</sub>As pseudomorphic transistors
W-L Chang; H-J Pan; W-C Wang; K-B Thei; W-S Lour; W-C Liu
Журнал:
Semiconductor Science and Technology
Дата:
1999-10-01
Аннотация:
The influences of the mesa-sidewall effect on dc and RF performances of Ga<sub>0.51</sub>In<sub>0.49</sub>P/In<sub>0.15</sub>Ga<sub>0.85</sub>As pseudomorphic high electron mobility transistors are studied and demonstrated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including the excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sidegating effect.
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