| Автор | W-L Chang |
| Автор | H-J Pan |
| Автор | W-C Wang |
| Автор | K-B Thei |
| Автор | W-S Lour |
| Автор | W-C Liu |
| Дата выпуска | 1999-10-01 |
| dc.description | The influences of the mesa-sidewall effect on dc and RF performances of Ga<sub>0.51</sub>In<sub>0.49</sub>P/In<sub>0.15</sub>Ga<sub>0.85</sub>As pseudomorphic high electron mobility transistors are studied and demonstrated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including the excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sidegating effect. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Influences of the mesa-sidewall effect on Ga<sub>0.51</sub>In<sub>0.49</sub>P/In<sub>0.15</sub>Ga<sub>0.85</sub>As pseudomorphic transistors |
| Тип | paper |
| DOI | 10.1088/0268-1242/14/10/301 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 14 |
| Первая страница | 887 |
| Последняя страница | 891 |
| Выпуск | 10 |
