Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition
Zhi-Jun Xin; Richard J Peaty; Harvey N Rutt; Robert W Eason; Zhi-Jun Xin; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK; Richard J Peaty; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK; Harvey N Rutt; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK; Robert W Eason; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK
Журнал:
Semiconductor Science and Technology
Дата:
1999-08-01
Аннотация:
We report, for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200 °C to 680 °C, epitaxial wurtzite (002) ZnS films have been successfully grown on (102) sapphire and (001) silicon substrates. X-ray diffraction data yield full width at half maximum 2 values of 0.13° for as-grown samples, compared with 2 values of 0.09° and 0.08° for the bare sapphire and silicon substrates respectively.
79.14Кб