| Автор | Zhi-Jun Xin |
| Автор | Richard J Peaty |
| Автор | Harvey N Rutt |
| Автор | Robert W Eason |
| Дата выпуска | 1999-08-01 |
| dc.description | We report, for the first time, epitaxial growth of high-quality ZnS films on sapphire and silicon substrates, using pulsed laser deposition. X-ray diffraction results show that at all growth temperatures from 200 °C to 680 °C, epitaxial wurtzite (002) ZnS films have been successfully grown on (102) sapphire and (001) silicon substrates. X-ray diffraction data yield full width at half maximum 2 values of 0.13° for as-grown samples, compared with 2 values of 0.09° and 0.08° for the bare sapphire and silicon substrates respectively. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition |
| Тип | paper |
| DOI | 10.1088/0268-1242/14/8/305 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 14 |
| Первая страница | 695 |
| Последняя страница | 698 |
| Аффилиация | Zhi-Jun Xin; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Аффилиация | Richard J Peaty; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Аффилиация | Harvey N Rutt; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Аффилиация | Robert W Eason; Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Выпуск | 8 |
