0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
S S Mikhrin; A E Zhukov; A R Kovsh; N A Maleev; V M Ustinov; Yu M Shernyakov; I P Soshnikov; D A Livshits; I S Tarasov; D A Bedarev; B V Volovik; M V Maximov; A F Tsatsul'nikov; N N Ledentsov; P S Kop'ev; D Bimberg; Zh I Alferov
Журнал:
Semiconductor Science and Technology
Дата:
2000-11-01
Аннотация:
A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer (SML) InAs/GaAs quantum dots, emitting at about 940 nm. Owing to the better uniformity of sub-monolayer quantum dots, the SML QD laser surpasses the SK QD one in power characteristics. A maximum output power of 3.9 W and a peak power conversion efficiency of 59% have been achieved for SML QD 100 µm wide lasers at 10 °C.
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