| Автор | S S Mikhrin |
| Автор | A E Zhukov |
| Автор | A R Kovsh |
| Автор | N A Maleev |
| Автор | V M Ustinov |
| Автор | Yu M Shernyakov |
| Автор | I P Soshnikov |
| Автор | D A Livshits |
| Автор | I S Tarasov |
| Автор | D A Bedarev |
| Автор | B V Volovik |
| Автор | M V Maximov |
| Автор | A F Tsatsul'nikov |
| Автор | N N Ledentsov |
| Автор | P S Kop'ev |
| Автор | D Bimberg |
| Автор | Zh I Alferov |
| Дата выпуска | 2000-11-01 |
| dc.description | A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer (SML) InAs/GaAs quantum dots, emitting at about 940 nm. Owing to the better uniformity of sub-monolayer quantum dots, the SML QD laser surpasses the SK QD one in power characteristics. A maximum output power of 3.9 W and a peak power conversion efficiency of 59% have been achieved for SML QD 100 µm wide lasers at 10 °C. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| Тип | paper |
| DOI | 10.1088/0268-1242/15/11/309 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 15 |
| Первая страница | 1061 |
| Последняя страница | 1064 |
| Выпуск | 11 |
