Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells
E Pérez; L Viña; E S Koteles; K M Lau; A Di Carlo; P Lugli
Журнал:
Semiconductor Science and Technology
Дата:
2000-02-01
Аннотация:
We have investigated the influence of the electronic band structure on the exciton dynamics in GaAsP tensile-strained quantum wells. We have found that the exciton cooling time is notably reduced when the heavy- and light-hole excitons are degenerate. The lifetime of the heavy-hole exciton is ~300 ps whereas it is ~500 ps for the light-hole exciton. Furthermore, we have determined, from the initial degree of polarization of the emission, the valence-band mixing as a function of the energy splitting between the heavy-hole and light-hole subbands. The degree of mixing is in qualitative agreement with tight-binding calculations.
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