| Автор | E Pérez |
| Автор | L Viña |
| Автор | E S Koteles |
| Автор | K M Lau |
| Автор | A Di Carlo |
| Автор | P Lugli |
| Дата выпуска | 2000-02-01 |
| dc.description | We have investigated the influence of the electronic band structure on the exciton dynamics in GaAsP tensile-strained quantum wells. We have found that the exciton cooling time is notably reduced when the heavy- and light-hole excitons are degenerate. The lifetime of the heavy-hole exciton is ~300 ps whereas it is ~500 ps for the light-hole exciton. Furthermore, we have determined, from the initial degree of polarization of the emission, the valence-band mixing as a function of the energy splitting between the heavy-hole and light-hole subbands. The degree of mixing is in qualitative agreement with tight-binding calculations. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells |
| Тип | paper |
| DOI | 10.1088/0268-1242/15/2/319 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 15 |
| Первая страница | 189 |
| Последняя страница | 196 |
| Выпуск | 2 |
