Effect of ageing on x-ray induced dopant passivation in MOS capacitors
E A de Vasconcelos; E F da Silva Jr; H J Khoury; V N Freire
Журнал:
Semiconductor Science and Technology
Дата:
2000-08-01
Аннотация:
Boron and phosphorus passivation in silicon metal-oxide-semiconductor (MOS) capacitors under x-ray irradiation follows a power law in the form ΔN/N<sub>0</sub>~(dose)<sup>α</sup>, with ½≤α≤1, depending on processing parameters and the device history before irradiation. The minimum x-ray dose for observation of dopant passivation in fluorinated p-type MOS capacitors is smaller when the time interval between fabrication and subsequent irradiation increases. We reason that room-temperature ageing within this timescale is a result of either adsorption of water or gradual reactions of fluorine with hydrogen, silicon or oxygen-related species in the neighbourhood of the SiO<sub>2</sub>/Si interface.
98.00Кб