| Автор | E A de Vasconcelos |
| Автор | E F da Silva Jr |
| Автор | H J Khoury |
| Автор | V N Freire |
| Дата выпуска | 2000-08-01 |
| dc.description | Boron and phosphorus passivation in silicon metal-oxide-semiconductor (MOS) capacitors under x-ray irradiation follows a power law in the form ΔN/N<sub>0</sub>~(dose)<sup>α</sup>, with ½≤α≤1, depending on processing parameters and the device history before irradiation. The minimum x-ray dose for observation of dopant passivation in fluorinated p-type MOS capacitors is smaller when the time interval between fabrication and subsequent irradiation increases. We reason that room-temperature ageing within this timescale is a result of either adsorption of water or gradual reactions of fluorine with hydrogen, silicon or oxygen-related species in the neighbourhood of the SiO<sub>2</sub>/Si interface. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Effect of ageing on x-ray induced dopant passivation in MOS capacitors |
| Тип | paper |
| DOI | 10.1088/0268-1242/15/8/302 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 15 |
| Первая страница | 794 |
| Последняя страница | 798 |
| Выпуск | 8 |
