The exciton-phonon system in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells
M H Degani; O Hipolito; M H Degani; Dept. de Fisica e Ciencia dos Mater., Sao Paulo Univ., Brazil; O Hipolito; Dept. de Fisica e Ciencia dos Mater., Sao Paulo Univ., Brazil
Журнал:
Semiconductor Science and Technology
Дата:
1987-09-01
Аннотация:
The binding energies of light- and heavy-hole exciton-phonon systems in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells are calculated as a function of the well thickness for several values of the heights of the potential barriers. A comparison between these results and recent experimental measurements is presented.
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