| Автор | M H Degani |
| Автор | O Hipolito |
| Дата выпуска | 1987-09-01 |
| dc.description | The binding energies of light- and heavy-hole exciton-phonon systems in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells are calculated as a function of the well thickness for several values of the heights of the potential barriers. A comparison between these results and recent experimental measurements is presented. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The exciton-phonon system in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells |
| Тип | paper |
| DOI | 10.1088/0268-1242/2/9/003 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 2 |
| Первая страница | 578 |
| Последняя страница | 581 |
| Аффилиация | M H Degani; Dept. de Fisica e Ciencia dos Mater., Sao Paulo Univ., Brazil |
| Аффилиация | O Hipolito; Dept. de Fisica e Ciencia dos Mater., Sao Paulo Univ., Brazil |
| Выпуск | 9 |
