Dimethyl indium ditertiarybutyl phosphine: a novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy
D A Andrews; G J Davies; D C Bradley; M M Faktor; D M Frigo; E A D White; D A Andrews; British Telecom Res. Labs., Martlesham Heath, UK; G J Davies; British Telecom Res. Labs., Martlesham Heath, UK; D C Bradley; British Telecom Res. Labs., Martlesham Heath, UK; M M Faktor; British Telecom Res. Labs., Martlesham Heath, UK; D M Frigo; British Telecom Res. Labs., Martlesham Heath, UK; E A D White; British Telecom Res. Labs., Martlesham Heath, UK
Журнал:
Semiconductor Science and Technology
Дата:
1988-10-01
Аннотация:
The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine.
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