| Автор | D A Andrews |
| Автор | G J Davies |
| Автор | D C Bradley |
| Автор | M M Faktor |
| Автор | D M Frigo |
| Автор | E A D White |
| Дата выпуска | 1988-10-01 |
| dc.description | The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Dimethyl indium ditertiarybutyl phosphine: a novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy |
| Тип | lett |
| DOI | 10.1088/0268-1242/3/10/016 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 3 |
| Первая страница | 1053 |
| Последняя страница | 1056 |
| Аффилиация | D A Andrews; British Telecom Res. Labs., Martlesham Heath, UK |
| Аффилиация | G J Davies; British Telecom Res. Labs., Martlesham Heath, UK |
| Аффилиация | D C Bradley; British Telecom Res. Labs., Martlesham Heath, UK |
| Аффилиация | M M Faktor; British Telecom Res. Labs., Martlesham Heath, UK |
| Аффилиация | D M Frigo; British Telecom Res. Labs., Martlesham Heath, UK |
| Аффилиация | E A D White; British Telecom Res. Labs., Martlesham Heath, UK |
| Выпуск | 10 |
