1/f noise in Ohmic MOS inversion layers
S A Hayat; B K Jones; P C Russell; S A Hayat; Dept. of Phys., Lancaster Univ., UK; B K Jones; Dept. of Phys., Lancaster Univ., UK; P C Russell; Dept. of Phys., Lancaster Univ., UK
Журнал:
Semiconductor Science and Technology
Дата:
1988-09-01
Аннотация:
Measurements have been made of the 1/f noise in MOS enhancement and depletion devices in strong inversion, biased in the Ohmic region between 77 and 360 K. Measurements of the DC characteristics have enabled the results to be related to a clear model of the device operation. The data do not fit mobility or quantum 1/f noise models. Good agreement is found with a number fluctuation model if the noise is assumed to be produced by two types of trapping process.
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