| Автор | S A Hayat |
| Автор | B K Jones |
| Автор | P C Russell |
| Дата выпуска | 1988-09-01 |
| dc.description | Measurements have been made of the 1/f noise in MOS enhancement and depletion devices in strong inversion, biased in the Ohmic region between 77 and 360 K. Measurements of the DC characteristics have enabled the results to be related to a clear model of the device operation. The data do not fit mobility or quantum 1/f noise models. Good agreement is found with a number fluctuation model if the noise is assumed to be produced by two types of trapping process. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 1/f noise in Ohmic MOS inversion layers |
| Тип | paper |
| DOI | 10.1088/0268-1242/3/9/015 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 3 |
| Первая страница | 919 |
| Последняя страница | 925 |
| Аффилиация | S A Hayat; Dept. of Phys., Lancaster Univ., UK |
| Аффилиация | B K Jones; Dept. of Phys., Lancaster Univ., UK |
| Аффилиация | P C Russell; Dept. of Phys., Lancaster Univ., UK |
| Выпуск | 9 |
