Hydrogen passivation of donors and acceptors in InP
E M Omeljanovsky; A V Pakhomov; A Y Polyakov; E M Omeljanovsky; Inst. of Rare Metals, Moscow, USSR; A V Pakhomov; Inst. of Rare Metals, Moscow, USSR; A Y Polyakov; Inst. of Rare Metals, Moscow, USSR
Журнал:
Semiconductor Science and Technology
Дата:
1989-11-01
Аннотация:
Hydrogen passivation of shallow donors and acceptors in n- and p-type InP is demonstrated. The process is more efficient in p-type material implying hydrogen in InP to be a deep donor as in Si. Other accompanying effects such as photoluminescence intensity increase and improvements in I-V characteristics are also reported.
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