| Автор | E M Omeljanovsky |
| Автор | A V Pakhomov |
| Автор | A Y Polyakov |
| Дата выпуска | 1989-11-01 |
| dc.description | Hydrogen passivation of shallow donors and acceptors in n- and p-type InP is demonstrated. The process is more efficient in p-type material implying hydrogen in InP to be a deep donor as in Si. Other accompanying effects such as photoluminescence intensity increase and improvements in I-V characteristics are also reported. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Hydrogen passivation of donors and acceptors in InP |
| Тип | paper |
| DOI | 10.1088/0268-1242/4/11/008 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 4 |
| Первая страница | 947 |
| Последняя страница | 950 |
| Аффилиация | E M Omeljanovsky; Inst. of Rare Metals, Moscow, USSR |
| Аффилиация | A V Pakhomov; Inst. of Rare Metals, Moscow, USSR |
| Аффилиация | A Y Polyakov; Inst. of Rare Metals, Moscow, USSR |
| Выпуск | 11 |
