The low-frequency noise of rapid thermally annealed (RTA) n-channel MOSFETS has been studied and compared with furnace annealed devices. The RTA devices exhibited higher noise (up to an order of magnitude in E_n). The increase in interface (1/f) noise was thought to be related to the fast cooling rates, associated with RTA. Further, a significant contribution of G-R noise, due to bulk defects, was found for short RTA cycles. Measurements on RTA samples have also shown a deterioration of device performance, with respect to channel interface state density and threshold voltage.