| Автор | D C Murray |
| Автор | A G R Evans |
| Автор | J L Altrip |
| Автор | J C Carter |
| Дата выпуска | 1989-05-01 |
| dc.description | The low-frequency noise of rapid thermally annealed (RTA) n-channel MOSFETS has been studied and compared with furnace annealed devices. The RTA devices exhibited higher noise (up to an order of magnitude in E<sub>n</sub>). The increase in interface (1/f) noise was thought to be related to the fast cooling rates, associated with RTA. Further, a significant contribution of G-R noise, due to bulk defects, was found for short RTA cycles. Measurements on RTA samples have also shown a deterioration of device performance, with respect to channel interface state density and threshold voltage. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS |
| Тип | paper |
| DOI | 10.1088/0268-1242/4/5/011 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 4 |
| Первая страница | 393 |
| Последняя страница | 398 |
| Аффилиация | D C Murray; Dept. of Electron. & Comput. Sci., Southampton Univ., UK |
| Аффилиация | A G R Evans; Dept. of Electron. & Comput. Sci., Southampton Univ., UK |
| Аффилиация | J L Altrip; Dept. of Electron. & Comput. Sci., Southampton Univ., UK |
| Аффилиация | J C Carter; Dept. of Electron. & Comput. Sci., Southampton Univ., UK |
| Выпуск | 5 |
