Temperature dependence of the energy gap and some electrical properties of Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub> (II) single crystals
J A Kalomiros; A N Anagnostopoulos; J Spyridelis; J A Kalomiros; Dept. of Phys., Solid State Sect., Aristotle Univ. of Thessaloniki, Greece; A N Anagnostopoulos; Dept. of Phys., Solid State Sect., Aristotle Univ. of Thessaloniki, Greece; J Spyridelis; Dept. of Phys., Solid State Sect., Aristotle Univ. of Thessaloniki, Greece
Журнал:
Semiconductor Science and Technology
Дата:
1989-07-01
Аннотация:
Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>(II) single crystals were synthesised by vapour transport reaction and characterised by means of X-ray diffraction and electron microscopy. Transmission spectra were used for the evaluation of the energy gap in the temperature range 10-340 K. The electrical behaviour of the material was examined. Measurements of the n-type electrical conductivity as a function of the reciprocal temperature and an I(U) characteristic led to the determination of trap parameters. Four energy levels were resolved in the range 0.29-1.0 eV below the conduction band, with concentrations varying from 10<sup>9</sup> to 10<sup>20</sup> cm<sup>-3</sup>. The electrical anisotropy was also investigated, and was found to be thermally activated.
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